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SANTA CLARA, CA, Dec 1, 2011 - (ACN Newswire) - Applied Materials, Inc. will host an important forum on December 6, 2011, in Washington, D.C., to explore the semiconductor memory technologies that will enable future generations of mobile computing - from smartphones and tablets to advanced cloud servers. Critical topics for discussion will include: advanced DRAM* and SRAM** technologies, emerging memory types such as spin torque transfer RAM (STT RAM) or resistive RAM (RRAM), and advanced 3-D packaging.
The forum, titled "How will RAM Change for the Mobile Computing Era?" will be moderated by Professor Yoshio Nishi, professor of electrical engineering at Stanford University. To register for this exciting event, please visit: http://www.appliedmaterials.com/events/iedm-2011 .
Panel:
Dr. Narbeh Derhacobian - president and CEO, Adesto Technologies, Corp.
Dr. Gyoyoung Jin - senior vice president, Samsung Microelectronics, Ltd.
Dr. Jae-Sung Roh - research fellow, Hynix Semiconductor, Inc.
Dr. Gurtej Sandhu - senior fellow, Micron Technology, Inc.
Dr. Klaus Schuegraf - chief technology officer, Applied Materials, Inc.
Dr. Geoffrey Yeap - vice president of technology, Qualcomm, Inc.
Where:
Dupont Circle Hotel
1500 New Hampshire Avenue NW, Washington, DC 20036
When: Tuesday, December 6, 2011
Schedule:
5:15pm - 6:15pm Registration and Reception
6:15pm - 7:30pm Panel Discussion
7:30pm - 8:00pm Beverages/Social
Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in providing innovative equipment, services and software to enable the manufacture of advanced semiconductor, flat panel display and solar photovoltaic products. Our technologies help make innovations like smartphones, flat screen TVs and solar panels more affordable and accessible to consumers and businesses around the world. At Applied Materials, we turn today's innovations into the industries of tomorrow. Learn more at www.appliedmaterials.com .
Contact:
Connie Duncan (editorial/media) +1-408-563-6209
Michael Sullivan (financial community) +1-408-986-7977
* DRAM = dynamic random access memory
** SRAM = static random access memory
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(i) the releases contained herein are protected by copyright and other applicable laws; and
(ii) they are solely responsible for the content, accuracy and originality of the information contained therein.
Source: Applied Materials via Thomson Reuters ONE
Copyright (c) Thomson Reuters 2011. All rights reserved.
Topic: Press release summary
Source: Applied Materials, Inc.
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From the Asia Corporate News Network
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